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2SD1627-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN SILICON TRANSISTOR. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1627-TD-E
- Description：NPN SILICON TRANSISTOR
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1627-TD-E
Single Bipolar Transistors Overview
The 2SD1627-TD-E is an NPN silicon epitaxial planar transistor manufactured by onsemi. It is designed for high-density applications requiring small-sized hybrid ICs. The device features low saturation voltage and high current gain (hFE). It supports a maximum DC collector current of 5 A and offers a maximum collector-emitter voltage of 20 V. The component utilizes a PCP surface-mount package with dimensions of 4.5 x 2.5 x 1.5 mm. It operates at a maximum frequency of 120 MHz and handles up to 1.5 W power dissipation. The unit supports a maximum operating temperature of +150 °C.
Single Bipolar Transistors Feature Summary
- Low saturation voltage for efficient switching
- High hFE characteristics
- Large current capacity
- Very small size facilitating high-density integration
Single Bipolar Transistors Applications
- High-density hybrid ICs
- Small-sized electronic circuits
- General-purpose amplification and switching
Single Bipolar Transistors Procurement Notes
Verify the specific datasheet version and manufacturer documentation for the 2SD1627-TD-E part number before procurement. Ensure that the PCP package type and electrical ratings align with the target circuit design requirements. Confirm compatibility with surface-mount assembly processes. Cross-reference technical specifications against official onsemi records to validate performance parameters.
Single Bipolar Transistors Selection Notes
Select this component when a compact NPN transistor with high current handling capability is required. The PCP package allows for space-constrained designs. Consider the 20 V collector-emitter voltage limit and 5 A current rating for suitability in low-voltage, high-current applications. Evaluate thermal management needs given the 1.5 W power dissipation rating.
Single Bipolar Transistors Part Context
This component belongs to the single bipolar transistor category within onsemi's portfolio. It is an NPN silicon device suitable for general-purpose use. The product line includes similar transistors optimized for various power and signal processing tasks. The 2SD1627-TD-E specifically targets applications demanding small form factors and reliable switching performance.
Single Bipolar Transistors Replacement Considerations
The 2SD1628G-TD-E is a related NPN transistor from onsemi featuring similar PCP packaging and electrical characteristics. Verify pinout compatibility and specific parameter differences before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
