2SD1628G-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD1628G-TD-E is a single NPN silicon bipolar junction transistor designed for surface-mount applications. It features a maximum DC collector current of 5 A and a collector-emitter voltage rating of 20 V. The device operates within a temperature range up to +150 °C and utilizes the PCP (TO-243AA) package. Key electrical specifications include a transition frequency of 120 MHz, a maximum power dissipation of 1.5 W, and a collector-base voltage of 60 V.

Single Bipolar Transistors Feature Summary

• High current handling capability suitable for power switching applications
• Surface-mount construction for automated assembly processes
• Robust thermal performance with high maximum junction temperature rating

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Low-voltage amplifier stages
• Driver circuits for loads requiring moderate current levels

Single Bipolar Transistors Procurement Notes

Verify the specific suffix G-TD-E against official onsemi documentation to confirm pinout and packaging details. Ensure compatibility with existing PCB footprints for the PCP package. Confirm RoHS compliance status through the manufacturer's latest material declaration before integration into regulated products.

Single Bipolar Transistors Selection Notes

Select this component when a surface-mount NPN transistor with 5 A continuous current capacity is required. The 20 V breakdown voltage limits suitability to low-voltage systems. Consider the 1.5 W power dissipation limit and ensure adequate thermal management is provided in the final design to maintain operation within safe junction temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1628 series of small-signal bipolar transistors manufactured by onsemi. The series is characterized by its use in general-purpose switching and amplification roles. The specific variant 2SD1628G-TD-E represents a tape-and-reel packaged version intended for high-volume surface-mount production lines.

Single Bipolar Transistors Replacement Considerations

The 2SD1628F-TD-H is documented as a parameter-equivalent substitute for this component.