Single Bipolar Transistors 2SD16400R product image

2SD16400R

  • Description:TRANS NPN DARL 100V 2A TO126B-A1
  • Series:-

SKU:65c3c6b54615 Category: Brand:

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2SD16400R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 100V 2A TO126B-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD16400R

  • Description:TRANS NPN DARL 100V 2A TO126B-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8000 @ 1A, 10V
  • Power - Max:1.2 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126B-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD16400R

2SD16400R

Single Bipolar Transistors Overview

The Panasonic 2SD1640R is a silicon NPN epitaxial planar type Darlington transistor designed for low-frequency output amplification. It features a collector current rating of 2A and a peak collector current of 3A, with a maximum collector-emitter voltage (VCEO) of 100V. The device offers a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank classification. It operates within an ambient temperature range of -55°C to +150°C and utilizes a TO-126B-A1 package.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio suitable for sensitive signal amplification
  • Large peak collector current capability for handling transient loads
  • High collector-emitter voltage rating for robust operation

Single Bipolar Transistors Applications

  • Low-frequency output amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your application against the datasheet specifications. Confirm that the component lifecycle status aligns with long-term production needs, as maintenance or discontinuation notices may apply. Ensure compliance with RoHS directives if applicable to your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when high gain is necessary in a low-frequency power amplification context. Consider the thermal resistance characteristics and the need for heat sinking at higher ambient temperatures. Verify that the 100V VCEO rating provides sufficient margin for your circuit's operating voltage and potential transients.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1640 series of NPN Darlington transistors manufactured by Panasonic Electronic Components. It is housed in a TO-126B-A1 package, which is distinct from standard TO-92 or TO-220 form factors. The 'R' suffix typically denotes a specific tape and reel packaging configuration for automated assembly.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2SD16400R2SD16400R

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