2SD16450R

Single Bipolar Transistors Overview

The Panasonic 2SD1645 is a silicon NPN epitaxial planar type darlington transistor designed for low frequency amplification. It features an integrated zener diode rated at 60 V between the collector-base and collector-emitter terminals to suppress voltage spikes. The device provides high forward current transfer ratio (hFE) with extremely satisfactory linearity, ranging from 4,000 to 40,000 depending on the rank. Key electrical ratings include a collector-emitter voltage of 60±10 V, a collector current of 1.0 A, and a collector power dissipation of 1.2 W without a heat sink. The transition frequency is specified at 150 MHz.

Single Bipolar Transistors Feature Summary

• Built-in zener diode for collector-base and collector-emitter protection
• Darlington connection structure for high gain
• Extremely satisfactory linearity of the forward current transfer ratio

Single Bipolar Transistors Applications

• Low frequency amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your design, as performance varies significantly across these classifications. Confirm the package code TO-126B-A1 matches your PCB footprint. Check the official Panasonic semiconductor website for the most current maintenance or discontinuation status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and internal overvoltage protection are necessary in low-frequency applications. Ensure the thermal environment allows for the specified 1.2 W dissipation or utilize a suitable heat sink if higher power handling is needed. Verify that the 60 V breakdown voltage meets the circuit's maximum operating requirements.

Single Bipolar Transistors Part Context

This part belongs to the category of silicon NPN epitaxial planar transistors manufactured by Panasonic Electronic Components. It utilizes a darlington configuration to achieve high current gain. The device is housed in the TO-126B-A1 package, which is a standard through-hole mounting style suitable for general-purpose electronic designs.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official resources for potential replacements.