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2SD1651C-CTV-YB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 6A 800V. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1651C-CTV-YB is a bipolar NPN transistor designed for high-voltage switching applications. It features a collector-emitter voltage rating of 800 V and a continuous collector current capacity of 6 A. The component utilizes a CTV package, providing a compact form factor suitable for dense circuit layouts. This device is engineered to handle significant power dissipation while maintaining reliable performance in demanding electrical environments.
Verify the specific suffix CTV-YB against official onsemi documentation to confirm exact mechanical dimensions and tape-and-reel specifications. Ensure that the requested part matches the active status indicated in public catalogs. Cross-reference the manufacturer lot codes with the latest datasheet revisions to guarantee compatibility with current manufacturing standards and environmental compliance requirements.
Select this component when an NPN configuration is required for high-voltage isolation above standard levels. The 800 V rating provides a safety margin for inductive loads and transient spikes common in industrial settings. Consider the thermal characteristics of the CTV package during PCB layout to ensure adequate heat dissipation for sustained 6 A operation without exceeding junction temperature limits.
This transistor belongs to onsemi's discrete semiconductor portfolio, focusing on general-purpose and specialized power switching solutions. The 2SD series designation typically indicates a specific internal die structure optimized for fast switching speeds and low saturation voltages. It serves as a critical active element in converting and regulating electrical energy within complex electronic systems.
Consult official cross-reference guides for direct replacements. Verify pinout compatibility and thermal resistance values before substituting with other NPN transistors offering similar voltage and current ratings.
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