2SD1664T100P

Single Bipolar Transistors Overview

The 2SD1664T100P is an NPN silicon epitaxial planar medium power transistor manufactured by ROHM Semiconductor. It supports a collector-emitter voltage of 32V and a continuous collector current of 1A. The device features a low saturation voltage, typically 0.15V at IC/IB = 500mA/50mA. It is designed for surface mount applications and serves as the complementary counterpart to the 2SB1132 and 2SB1237 PNP transistors.

Single Bipolar Transistors Feature Summary

• Low saturation voltage characteristic
• Epitaxial planar structure
• Complements specific PNP counterparts

Single Bipolar Transistors Applications

• General purpose medium power switching
• Complementary amplifier stages with 2SB1132 or 2SB1237

Single Bipolar Transistors Procurement Notes

Verify the component status before integration into new designs. Confirm that the T100P suffix corresponds to the required tape and reel packaging format for your assembly line. Ensure the RoHS compliance status matches your project requirements by checking the latest manufacturer documentation.

Single Bipolar Transistors Selection Notes

Select this component when a 32V NPN transistor with 1A current capability is required. Its low saturation voltage makes it suitable for efficient switching applications. Consider pairing it with the specified complementary PNP devices for balanced push-pull circuit designs.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1664 series of medium power transistors from ROHM. It shares electrical characteristics with the 2SD1858 model. The device is classified as a single-element NPN silicon transistor intended for general-purpose use in electronic circuits requiring moderate power handling.

Single Bipolar Transistors Replacement Considerations

The 2SD1858 is documented as having identical electrical characteristics. For complementary PNP functions, the 2SB1132 and 2SB1237 are specified as direct complements.