2SD1664T100Q

Single Bipolar Transistors Overview

The 2SD1664T100Q is a medium power NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 32V and a continuous collector current (IC) of 1A. The device achieves a low saturation voltage, typically 0.15V at IC/IB = 500mA/50mA. It is supplied in a tape-and-reel packaging format.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• Epitaxial planar structure for reliable operation
• Designed to complement the 2SB1132 and 2SB1237 PNP transistors

Single Bipolar Transistors Applications

• General-purpose medium power amplification
• Switching applications requiring low saturation voltage
• Complementary pairs with specified PNP counterparts

Single Bipolar Transistors Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors only. Ensure the ordering suffix matches the required packaging configuration. Check for RoHS compliance documentation before integration into new products.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a 32V NPN transistor with 1A current handling capability. Consider its complementary relationship with the 2SB1132 or 2SB1237 for push-pull configurations. Evaluate thermal management requirements based on the specified power dissipation limits.

Single Bipolar Transistors Part Context

This part belongs to ROHM's medium power transistor series. It shares electrical characteristics with the 2SD1858 model. The device utilizes an NPN silicon epitaxial planar structure suitable for general electronic applications.

Single Bipolar Transistors Replacement Considerations

The 2SD1858 is a confirmed substitute with identical specifications. Verify pinout compatibility and thermal characteristics when replacing existing designs.