2SD1684S

Single Bipolar Transistors Overview

The 2SD1684S is a single NPN silicon bipolar junction transistor designed for high-current switching and amplification applications. It features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 100V. The device supports a transition frequency up to 120MHz, enabling operation in various power and switching circuits. Packaged in the TO-126ML (TO-225AA) through-hole format, it operates at junction temperatures up to 150°C with a maximum power dissipation of 1.5W.

Single Bipolar Transistors Feature Summary

• Single-element NPN silicon construction optimized for robust performance
• Capable of handling high-current switching tasks up to 1.5A
• Suitable for amplification functions within general-purpose electronic circuits

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Amplifier stages requiring moderate current gain
• High-frequency signal processing up to 120MHz

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official onsemi documentation to ensure correct pinout and electrical characteristics. Confirm that the TO-126ML package matches the required thermal and mechanical constraints for the target PCB layout. Ensure sourcing channels provide genuine components to maintain reliability standards for high-current operations.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT is required for switching loads up to 1.5A with a 100V voltage rating. Consider the 120MHz transition frequency for applications demanding faster response times compared to standard low-frequency transistors. Evaluate the TO-126ML package for adequate heat dissipation relative to the 1.5W power limit in the intended environment.

Single Bipolar Transistors Part Context

This part belongs to the family of discrete bipolar junction transistors manufactured by onsemi. These components are fundamental building blocks in analog and digital circuit design, providing current control and amplification. The 2SD1684S specifically addresses needs for medium-power applications where reliable NPN switching is essential.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for direct equivalents. Verify compatibility regarding V(BR)CEO, I(C), and package dimensions before substitution.