2SD1685G

Single Bipolar Transistors Overview

The onsemi 2SD1685G is a single NPN silicon power bipolar transistor housed in a TO-126ML package. It supports a maximum collector current of 5A and a collector-to-emitter voltage of 20V, with a breakdown voltage of 60V at the collector-base junction. The device features a minimum DC current gain (hFE) of 280 for the G suffix classification. Key electrical parameters include a collector-to-emitter saturation voltage of 500mV max at 3A, a gain-bandwidth product of 120MHz, and a maximum power dissipation of 1.5W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• Large current capacity supporting up to 5A continuous operation
• Fast switching time suitable for high-speed applications
• Plastic-covered leadframe eliminates the need for insulators during mounting

Single Bipolar Transistors Applications

• Strobe drivers
• Voltage regulators
• Relay drivers
• Lamp drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'G' to confirm the hFE ranking range of 280 to 560, as other suffixes like 'F' have different gain specifications. Confirm the package type is TO-126ML and check that the datasheet revision matches the required design specifications. Ensure thermal management aligns with the 1.5W dissipation rating at 25°C case temperature.

Single Bipolar Transistors Selection Notes

Select this component when a low VCE(sat) NPN transistor is required for high-current switching applications. The TO-126ML package allows for direct mounting without insulators due to the plastic-covered leadframe. Consider the 20V VCEO limit and ensure the application voltage remains within safe operating areas defined by the ASO curves.

Single Bipolar Transistors Part Context

This part belongs to the Bipolar Transistor family from onsemi, specifically designed for power switching applications. It utilizes MBIT process technology to achieve fast switching speeds and large current capacity. The device is Pb-Free and RoHS compliant, intended for use in general-purpose electronic equipment requiring reliable NPN switching performance.

Single Bipolar Transistors Replacement Considerations

The 2SD1685F is a compatible alternative within the same series but features a lower hFE rank (160 to 320). Verify if the reduced current gain meets the base drive requirements of the specific circuit design before substituting.