2SD17070P

Single Bipolar Transistors Overview

The Panasonic 2SD1707P is a silicon NPN epitaxial planar power transistor designed for high-current switching applications. It features a maximum collector current of 20 A and a peak collector current of 30 A, with a collector-emitter voltage rating of 80 V. The device offers a collector power dissipation of 100 W at 25°C case temperature and a transition frequency of 20 MHz. Key electrical characteristics include a low collector-emitter saturation voltage of 1.5 V at full load and a forward current transfer ratio (hFE) ranging from 90 to 260 depending on the rank.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power switching
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current capability up to 20 A
• Full-pack package allowing direct heat sink installation with one screw

Single Bipolar Transistors Applications

• Power switching circuits
• High-power amplifier applications
• General electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'P' against official Panasonic documentation to confirm package type and compliance status. Check the manufacturer's website for the latest maintenance or discontinuation notices, as product lifecycles may have changed since the datasheet publication date. Ensure the component meets RoHS Directive requirements if applicable to your design specifications.

Single Bipolar Transistors Selection Notes

Select this component when high collector current handling and low saturation voltage are required in a TO-3 compatible package. Consider the thermal resistance characteristics and safe operating area curves for proper heat sink sizing. Verify that the hFE rank matches the drive circuit requirements for optimal switching performance.

Single Bipolar Transistors Part Context

The 2SD1707 is part of Panasonic's lineup of silicon NPN power transistors intended for general-purpose power switching. It serves as a complementary device to the PNP 2SB1156. The component utilizes an epitaxial planar structure to ensure reliability and consistent electrical characteristics under high-power conditions.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1156 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum DC collector current is 20 A, with a peak collector current rating of 30 A.

How is the package mounted to a heat sink?

The device uses a full-pack package design that allows installation onto a heat sink using a single screw.

What is the typical forward current transfer ratio range?

The forward current transfer ratio (hFE) ranges from 90 to 260, categorized into Rank Q (90-180) and Rank P (130-260).