2SD1724S

Single Bipolar Transistors Overview

The onsemi 2SD1724S is a single NPN silicon power bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (V(BR)CEO) of 100 V, with a collector-base voltage (V(BR)CBO) of 150 V. The device is housed in a TO-126LP plastic package, offering a compact surface-mount or through-hole compatible form factor. Key electrical specifications include a DC current gain (hFE) range typically between 35 and 250, a transition frequency (fT) of 150 MHz, and a maximum power dissipation (Pd) of 1.5 W at 25°C ambient temperature. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 100 V collector-emitter breakdown for robust switching performance
• Moderate current handling with 3 A continuous collector current rating
• Fast switching characteristics supported by a 150 MHz transition frequency
• Durable thermal operation up to 150°C junction temperature

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Linear amplifier stages
• Driver circuits for relays and solenoids
• Inverter and converter topologies

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and tape/reel configuration when sourcing components, as packaging variations may exist across different distribution channels. Confirm that the received parts match the exact 2SD1724S designation without additional alphanumeric modifiers that could indicate variant pinouts or electrical tolerances. Ensure compliance with RoHS directives if required for the target assembly. Cross-reference the manufacturer's latest datasheet revision to confirm parameter stability before finalizing procurement contracts.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 100 V blocking capability and 3 A current capacity is required in a TO-126LP package. It is suitable for designs needing moderate speed switching with a 150 MHz fT. Consider thermal management requirements given the 1.5 W power dissipation limit. Compare against alternative NPN devices with higher current ratings or lower saturation voltages if the application demands enhanced efficiency or higher load handling beyond these specific parameters.

Single Bipolar Transistors Part Context

The 2SD1724S belongs to the family of general-purpose NPN power transistors manufactured by onsemi. It serves as a discrete semiconductor solution within the broader portfolio of bipolar junction transistors (BJTs). This part is distinct from other series such as the 2SD1624S, which features a lower 50 V rating. The TO-126LP package provides a balance between thermal performance and board space efficiency, positioning it for use in consumer electronics, industrial control, and automotive auxiliary systems where reliable switching is critical.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must maintain the 100 V Vceo, 3A Ic, and NPN polarity. Verify pinout compatibility for the TO-126LP footprint. Check datasheets for equivalent hFE ranges and fT values to ensure circuit stability. Common alternatives include other 100V/3A NPN transistors from major manufacturers, provided they meet the thermal and electrical constraints of the original design.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SD1724S?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 100 V.

Does the 2SD1724S support high-frequency switching?

Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for moderate-speed switching applications.

What is the recommended operating temperature range?

The device operates within a junction temperature range of -55°C to +150°C.