2SD1733TLP

Single Bipolar Transistors Overview

The 2SD1733TLP is an NPN power transistor manufactured by ROHM Semiconductor, designed for high-voltage and high-current switching applications. It features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. The device exhibits low saturation voltage (VCE(sat)) and good hFE linearity across operating ranges. Packaged in the TUMT3 surface-mount format, it supports a storage temperature range from -55°C to 150°C. This component serves as a direct complement to older PNP counterparts such as the 2SB1260, 2SB1241, and 2SB1181, facilitating balanced push-pull configurations in driver circuits.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with VCEO rated at 80V for robust switching performance
• Capable of handling a continuous collector current of 1A DC
• Optimized for low collector-emitter saturation voltage to minimize power loss
• Provides consistent hFE linearity for stable amplification and driving characteristics

Single Bipolar Transistors Applications

• General-purpose driver transistors in consumer electronics
• Complementary pairs in audio or signal processing circuits alongside 2SB series devices
• Switching regulators and power management modules requiring 80V isolation
• Industrial control interfaces utilizing surface-mount topology

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to ensure correct tape-and-reel configuration and batch consistency. Confirm that the procurement channel sources directly from authorized distributors to avoid counterfeit components. Check current supply status as availability may vary based on production lifecycle stages. Ensure compatibility with existing PCB footprints designated for the TUMT3 package type before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80V rating and 1A current capacity is required in a compact surface-mount package. It is specifically intended to pair with complementary PNP devices like the 2SB1260 for matched performance in push-pull stages. Consider its low VCE(sat) characteristic for efficiency-critical designs. Verify thermal management requirements given the small form factor and power dissipation limits inherent to the TUMT3 housing.

Single Bipolar Transistors Part Context

The 2SD1733TLP belongs to ROHM's lineup of general-purpose power transistors engineered for reliability in diverse electronic systems. It complements the 2SB1733 PNP variant, offering a matched pair solution for designers. The device utilizes advanced silicon planar technology to achieve high breakdown voltages while maintaining low saturation characteristics. Its design focuses on linear hFE performance, making it suitable for applications demanding predictable gain behavior under varying load conditions.

Single Bipolar Transistors Replacement Considerations

The 2SD1898 is documented as a similar specification part within the ROHM portfolio. Designers should verify pinout compatibility and electrical parameter margins when substituting. Cross-manufacturer equivalents require careful validation of VCEO, IC ratings, and package dimensions to ensure circuit integrity without redesign.