2SD1758TLQ

Single Bipolar Transistors Overview

The 2SD1758TLQ is a medium power NPN silicon epitaxial planar transistor manufactured by ROHM. It features a low collector-emitter saturation voltage of 0.5V typical at IC/IB = 2A / 0.2A. The device supports a maximum DC collector current of 2A and a collector-emitter breakdown voltage of 32V. It operates within a junction temperature range up to 150°C and provides a minimum DC current gain (hFE) of 120, with transition frequencies reaching 30MHz.

Single Bipolar Transistors Feature Summary

• Epitaxial planar NPN silicon construction
• Low VCE(sat) for efficient switching
• High DC current transfer ratio

Single Bipolar Transistors Applications

• General-purpose amplification
• Switching circuits in consumer electronics
• Audio visual equipment drivers

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning classification required for the application, as the TLQ suffix indicates tape-and-reel packaging with defined gain ranges. Confirm RoHS compliance status and ensure the ordering unit quantity matches the 2500-piece standard packing specification provided in the official datasheet.

Single Bipolar Transistors Selection Notes

Select this component when a low saturation voltage is critical for minimizing power loss during high-current operation. Ensure the design accounts for the 32V collector-emitter voltage limit and verify that the thermal management strategy accommodates the specified power dissipation ratings under the intended operating conditions.

Single Bipolar Transistors Part Context

This transistor belongs to ROHM's medium power transistor series designed for general-use electronic equipment. It serves as a complementary or alternative device to other NPN transistors in similar voltage and current classes, supporting applications in office automation and communication devices where reliable switching performance is required.

Single Bipolar Transistors Replacement Considerations

The 2SD1862 is documented as a direct complementary part within the same datasheet family. Designers should consult the specific electrical characteristic curves for both devices to ensure compatibility with existing circuit parameters before substitution.