Single Bipolar Transistors 2SD1760TLP product image

2SD1760TLP

$0.28
  • Description:TRANS NPN 50V 3A CPT3
  • Series:-

SKU:78ff9659e30f Category: Brand:

  
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2SD1760TLP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 3A CPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1760TLP

  • Description:TRANS NPN 50V 3A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 3V
  • Power - Max:15 W
  • Frequency - Transition:90MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:CPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1760TLP

2SD1760TLP

Single Bipolar Transistors Overview

The 2SD1760TLP is an NPN epitaxial planar silicon power transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) rating of 3 A. The device achieves a typical low collector-emitter saturation voltage (VCE(sat)) of 0.5 V at IC/IB = 2A/0.2A. Maximum power dissipation is 15 W at Tc=25°C. The component utilizes the CPT3 package, equivalent to EIAJ SC-63, with a minimum DC current gain (hFE) of 82.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar NPN silicon construction for robust switching performance
  • Low collector-emitter saturation voltage characteristic
  • Designed as a complementary device to specific PNP transistors

Single Bipolar Transistors Applications

  • General-purpose power switching circuits
  • Complementary driver stages in amplifier designs
  • Power regulation modules requiring low saturation loss

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix 'TL' corresponds to the specified tape-and-reel packaging quantity of 2500 units per the manufacturer's datasheet. Confirm that the hFE binning classification aligns with circuit requirements, as gain ranges vary by suffix. Ensure thermal management adheres to the 15 W dissipation limit under appropriate heat sink conditions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current handling up to 3 A with minimal voltage drop during conduction. The low VCE(sat) reduces power loss compared to standard variants. Verify compatibility with existing PCB footprints designated for the SC-63/CPT3 package form factor before integration into new designs.

Single Bipolar Transistors Part Context

This part belongs to ROHM's discrete power transistor lineup, specifically engineered for medium-power switching applications. It serves as the NPN counterpart to PNP devices such as the 2SB1184 and 2SB1243, facilitating push-pull or complementary symmetry configurations in audio and power supply architectures.

Single Bipolar Transistors Replacement Considerations

The 2SD1864 is documented as a direct functional complement within the same series. Verify pinout and electrical specifications match before substitution.

2SD1760TLP2SD1760TLP
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