Single Bipolar Transistors 2SD1760TLQ product image

2SD1760TLQ

$1.00
  • Description:TRANS NPN 50V 3A CPT3
  • Series:-

SKU:5dbef55cc693 Category: Brand:

  
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2SD1760TLQ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 3A CPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1760TLQ

  • Description:TRANS NPN 50V 3A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 3V
  • Power - Max:15 W
  • Frequency - Transition:90MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:CPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1760TLQ

2SD1760TLQ

Single Bipolar Transistors Overview

The 2SD1760TLQ is an NPN epitaxial planar silicon power transistor manufactured by ROHM Semiconductor. It features a CPT3 (TO-252) surface-mount package with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) rating of 3 A. The device achieves a typical low collector-emitter saturation voltage (VCE(sat)) of 0.5 V at IC/IB = 2A/0.2A. Electrical characteristics include a DC current gain (hFE) range of 82 to 390, a transition frequency (fT) up to 90 MHz, and a maximum collector power dissipation of 15 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching performance
  • Epitaxial planar structure designed for high reliability
  • Compatible complement to specific PNP transistor series

Single Bipolar Transistors Applications

  • General-purpose power switching circuits
  • Complementary driver stages in amplifier designs
  • Power management modules requiring low saturation loss

Single Bipolar Transistors Procurement Notes

Verify the hFE binning code suffix (e.g., Q, R, P) against design requirements, as gain ranges vary significantly between bins. Confirm the TLQ packaging designation matches the required reel quantity and tape specifications. Ensure thermal management strategies account for the 15 W dissipation limit under case-cooled conditions rather than free-air PCB mounting.

Single Bipolar Transistors Selection Notes

Select this component when a 50 V NPN switch with low saturation voltage is required in a compact surface-mount form factor. Compare the hFE bin options to ensure sufficient drive current margins for the intended load. Evaluate the thermal resistance characteristics if operating near the maximum junction temperature limits or in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to ROHM's discrete transistor portfolio, specifically designed as a complementary pair to PNP devices like the 2SB1184 and 2SB1243. It utilizes the CPT3 package, which provides a balance between thermal performance and board space efficiency for medium-power applications.

Single Bipolar Transistors Replacement Considerations

The 2SD1864 is documented as a similar level replacement within the same package family. Verify pinout compatibility and electrical parameter alignment before substitution.

2SD1760TLQ2SD1760TLQ
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