Single Bipolar Transistors 2SD1781A_R1_00001 product image

2SD1781A_R1_00001

$0.38
  • Description:TRANS NPN 50V 3A SOT-23
  • Series:-

SKU:cd7e6d39c831 Category: Brand:

  
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2SD1781A_R1_00001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is TRANS NPN 50V 3A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1781A_R1_00001

  • Description:TRANS NPN 50V 3A SOT-23
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:140mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 500mA, 5V
  • Power - Max:1.25 W
  • Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1781A_R1_00001

2SD1781A_R1_00001

Single Bipolar Transistors Overview

The Panjit 2SD1781A is a silicon NPN epitaxial transistor housed in an SOT-23 package. It supports a collector-emitter voltage of 50V and a continuous collector current of 3A, with a peak pulse current rating of 5A. The device dissipates up to 1.25W at 25°C ambient temperature. Key electrical parameters include a maximum VCE(sat) of 140mV at Ic=1A/Ib=100mA, a transition frequency (fT) of 250MHz, and a DC current gain ranging from 200 to 900 depending on operating conditions.

Single Bipolar Transistors Feature Summary

  • Engineered for low saturation voltage operation to minimize power loss during switching.
  • Provides high collector current capability suitable for demanding load applications.
  • Maintains excellent DC current gain characteristics across various operating points.

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-voltage amplifier stages
  • Power management modules

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size or tape configuration. Ensure that the component meets required environmental standards like RoHS 2.0 compliance before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a compact surface-mount NPN transistor with high current handling capabilities. The low saturation voltage makes it appropriate for efficiency-critical applications where minimizing heat generation is essential.

Single Bipolar Transistors Part Context

This part belongs to the GPT-04TN series of general-purpose bipolar junction transistors manufactured by Panjit International Inc. It utilizes standard silicon epitaxial technology and is designed for mass production in consumer electronics and industrial control systems requiring reliable switching performance.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-referencing requires matching voltage ratings, current limits, and package dimensions to ensure functional compatibility without redesigning the host circuit board.

2SD1781A_R1_000012SD1781A_R1_00001
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