2SD1781KT146Q

Single Bipolar Transistors Overview

The 2SD1781KT146Q is an NPN medium power transistor manufactured by Rohm Semiconductor, designed for surface-mount applications in the SOT-346 (SMT3) package. It features a collector-emitter voltage of 32V and a maximum continuous collector current of 800mA. The device achieves a typical collector-emitter saturation voltage of 100mV at IC=500mA and IB=50mA. Electrical characteristics include a DC current gain range of 120 to 390 and a transition frequency of 150MHz. Power dissipation is rated at 200mW with a junction temperature limit of 150°C.

Single Bipolar Transistors Feature Summary

• Very low collector-emitter saturation voltage for efficient switching performance.
• High current capacity within a compact surface-mount package.
• Designed to complement the 2SB1197K PNP transistor.

Single Bipolar Transistors Applications

• Power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for the design, as the datasheet classifies the Q suffix into the 120-270 gain range. Confirm that the SOT-346 footprint matches the target PCB layout. Ensure the application environment remains within standard conditions, avoiding exposure to corrosive gases or extreme humidity which may affect reliability.

Single Bipolar Transistors Selection Notes

Select this component when a low VCE(sat) NPN transistor is needed for general-purpose power amplification. It serves as a direct complement to the 2SB1197K for push-pull configurations. Consider the 200mW power dissipation limit and derating requirements based on ambient temperature during circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1781K series of medium power transistors from Rohm Semiconductor. The KT146 suffix indicates the specific taping code and reel size configuration for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that this product complements the 2SB1197K. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SD1781KT146Q?

The Q rank specifies a minimum DC current gain of 120 and a maximum of 270 under test conditions of VCE = 3V and IC = 100mA.

Is this transistor suitable for automotive applications?

No. The manufacturer's notice specifies that products are designed for ordinary electronic equipment and advises consulting sales representatives for specific high-reliability applications like automotive use.

What is the maximum collector-base breakdown voltage?

The absolute maximum rating for collector-base voltage (VCBO) is 40V.