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2SD1805G-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 20V 5A TP. Review the specifications below when checking this part for your BOM.
The 2SD1805G-E is a silicon NPN bipolar junction transistor manufactured by onsemi. It is housed in a TO-251-3 (SOT-669) surface-mount package designed for through-hole compatibility. The device supports a continuous collector current of 5 A and operates with a maximum collector-emitter voltage of 20 V. Key electrical specifications include a minimum DC current gain (hFE) of 120, an emitter-base breakdown voltage of 6 V, and a power dissipation rating of 1 W.
Verify component authenticity upon receipt, as this part is listed as End-of-Life (EOL). Check manufacturing date codes against the discontinuance notification to ensure inventory freshness. Confirm RoHS compliance status via the official datasheet before integration into new designs.
Select this component when a high-current NPN transistor is required in a compact SOT-669 package. Ensure the application voltage does not exceed 20 V and that thermal management can handle 1 W dissipation. Consider the EOL status and limited availability when planning long-term production runs.
This device belongs to the 2SD1805 series of NPN transistors from onsemi. It serves as a discrete semiconductor solution for medium-power applications. The TO-251-3 package provides a balance between thermal efficiency and board space savings compared to traditional through-hole packages.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, alternative sourcing requires careful evaluation of pinout and electrical parameter compatibility.
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