Single Bipolar Transistors 2SD1815-T-TP product image

2SD1815-T-TP

  • Description:TRANS NPN 100V 3A DPAK
  • Series:-

SKU:eff8385275f4 Category: Brand:

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2SD1815-T-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 100V 3A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1815-T-TP

  • Description:TRANS NPN 100V 3A DPAK
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1815-T-TP

2SD1815-T-TP

Single Bipolar Transistors Overview

The MCC 2SD1815-T-TP is an NPN silicon epitaxial transistor in a DPAK package. It supports 3.0A collector current and 120V collector-base voltage with 1.0W power dissipation. The -T suffix indicates an hFE gain range of 200 to 400 at 500mA. Electrical characteristics include a typical transition frequency of 180MHz, saturation voltages of 0.4V (VCE) and 1.2V (VBE), and cutoff currents of 1.0µA. Operating junction temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain classification for efficient switching applications
  • Robust thermal performance with high power dissipation capability
  • Fast switching speeds suitable for high-frequency circuits

Single Bipolar Transistors Applications

  • General-purpose amplifier stages
  • Power switching circuits
  • Driver circuits requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE binning grade required for your design. Ensure compliance with RoHS directives if environmental regulations apply. Confirm availability through authorized distributors to guarantee genuine components and full traceability. Check for halogen-free options if specified by project requirements.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is needed for medium-power applications. The -T suffix provides a gain range of 200-400, ideal for low-drive requirements. Consider the DPAK package for improved thermal management compared to smaller surface-mount packages. Verify that the 120V breakdown voltage meets the circuit's maximum operating conditions.

Single Bipolar Transistors Part Context

This device belongs to the 2SD1815 series of NPN silicon epitaxial transistors manufactured by Micro Commercial Components. The series offers various hFE gain rankings to suit different amplification needs. The DPAK package provides a balance between power handling and compact footprint for industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for pin-compatible alternatives from other manufacturers. Verify that substitute parts meet or exceed the 3.0A current rating and 120V breakdown voltage specifications.

2SD1815-T-TP2SD1815-T-TP

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