2SD1815S-E

Single Bipolar Transistors Overview

The onsemi 2SD1815S-E is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-251-3 packages. It supports a maximum continuous collector current of 3 A and a collector-emitter breakdown voltage of 100 V. The device features a transition frequency of 180 MHz and a minimum DC current gain of 70 at 500 mA and 5 V. Power dissipation is rated at 1 W, with a collector-emitter saturation voltage of 400 mV at 150 mA and 1.5 A. The component operates up to a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Single NPN configuration optimized for general-purpose switching and amplification applications
• High-speed performance characterized by a 180 MHz transition frequency
• Robust thermal capability allowing operation at junction temperatures up to 150°C

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages requiring moderate speed and current handling
• Low-voltage power control applications

Single Bipolar Transistors Procurement Notes

Verify the obsolete status before design finalization, as the manufacturer has issued a Product Change Notification indicating end-of-life. Confirm that alternative sources or last-time buys are secured if production continuity is required. Ensure the TO-251-3 package footprint matches the target PCB layout constraints.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 100 V rating and 3 A current capacity is needed in a compact through-hole form factor. The 180 MHz bandwidth suits applications requiring faster switching than standard low-frequency transistors. Verify that the 1 W power dissipation limit aligns with the thermal management strategy of the host system.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1815 series of silicon NPN transistors manufactured by onsemi. It shares the same electrical specifications and pinout as the complementary PNP device, the 2SB1215, facilitating push-pull circuit designs. Both devices utilize the TO-251-3 package for efficient heat dissipation relative to their size.

Single Bipolar Transistors Replacement Considerations

• 2SB1215S-E

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SD1815S-E?

The maximum collector-emitter breakdown voltage (VCEO) is 100 V.

Is the 2SD1815S-E currently in active production?

No, the component is listed as obsolete with an end-of-life notification from the manufacturer.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is 70, measured at a collector current of 500 mA and a collector-emitter voltage of 5 V.