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2SD1817-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN 3A 60V DARLINGTON. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1817-E
- Description：NPN 3A 60V DARLINGTON
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1817-E
Single Bipolar Transistors Overview
The 2SD1817-E is a single NPN Darlington bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 3A. The device is housed in a 3-pin (3+Tab) TP package with a maximum power dissipation of 1000mW. Key electrical characteristics include high DC current gain and low collector saturation voltage, making it suitable for high-frequency applications requiring robust switching performance.
Single Bipolar Transistors Feature Summary
- Darlington configuration providing high DC current gain
- Capable of handling 3A continuous collector current
- Low collector saturation voltage for efficient operation
Single Bipolar Transistors Applications
- High-frequency switching circuits
- Power amplifier stages
- General-purpose transistor applications
Single Bipolar Transistors Procurement Notes
Verify the component marking against the official onsemi datasheet to confirm authenticity. Ensure the package type matches the specified 3-pin (3+Tab) TP configuration. Check for any specific ordering suffixes that may indicate tape and reel packaging versus bulk quantities. Confirm the date code aligns with current production standards to avoid obsolete stock.
Single Bipolar Transistors Selection Notes
Select this component when a high-gain NPN transistor is required for driving loads up to 3A. The Darlington structure simplifies biasing requirements compared to single transistors. Consider the 60V breakdown voltage limit for circuit design. Evaluate thermal management needs due to the 1000mW power dissipation rating in the specified package.
Single Bipolar Transistors Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor (BJT) category. It is designed for general-purpose electronic applications where moderate power handling and high gain are necessary. The product line emphasizes reliability and performance for industrial and consumer electronics markets.
Single Bipolar Transistors Replacement Considerations
Consult official cross-reference lists for direct equivalents. Verify pinout compatibility and electrical parameters such as V(BR)CEO and hFE before substitution. Ensure the replacement device supports the same TP package or requires adapter modifications.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
