2SD1819ASL

Single Bipolar Transistors Overview

The Panasonic 2SD1819ASL is a silicon NPN epitaxial planar transistor in an SMini3-G1 package. It supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a peak current rating of 200 mA. The device features a transition frequency of 150 MHz and a maximum power dissipation of 150 mW at 25°C ambient temperature. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 depending on the rank, and a collector-emitter saturation voltage of up to 0.3 V under specified conditions.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio for efficient signal amplification
• Low collector-emitter saturation voltage to minimize power loss
• S-Mini type package designed for equipment downsizing and automated insertion

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact hFE ranking and marking symbols. Confirm availability status as the product lifecycle may indicate maintenance or discontinuation phases. Ensure compliance with RoHS directives and verify that the intended application falls within standard electronic equipment usage rather than specialized safety-critical systems.

Single Bipolar Transistors Selection Notes

Select this component for general-purpose low-power amplification where compact surface-mount packaging is required. Consider the available hFE ranks (Q, R, S) if specific gain thresholds are necessary for the circuit design. Evaluate thermal management requirements given the 150 mW power dissipation limit and ensure operating conditions remain within the absolute maximum ratings for reliability.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1819A series of small-signal NPN transistors. It is electrically complementary to the 2SB1218A PNP transistor, facilitating push-pull configurations. The device utilizes a triple diffusion planar process technology optimized for high-frequency performance and low noise in consumer electronics applications.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1218A as the complementary PNP counterpart. No direct substitute part numbers are documented in the provided source material.