2SD1820ARL

Single Bipolar Transistors Overview

The Panasonic 2SD1820ARL is a silicon NPN epitaxial planar transistor designed for general amplification. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 500 mA, with a peak current capacity of 1 A. The device operates within a junction temperature range up to 150 °C and dissipates up to 150 mW at 25 °C ambient conditions. It offers a transition frequency of 200 MHz and includes forward current transfer ratio ranks (Q, R, S) ranging from 85 to 340. Packaged in the SMini3-G1 format, it serves as the complementary counterpart to the 2SB1219A.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• S-Mini type package enabling equipment downsizing and automated tape insertion

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'RL' against official Panasonic documentation to confirm reel packaging specifications. Confirm current lifecycle status via the manufacturer's website, as the datasheet indicates maintenance or discontinuation phases may apply. Ensure compliance with RoHS Directive requirements for your region. Validate that the SMini3-G1 package dimensions match your PCB footprint constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage general amplification tasks requiring compact surface-mount integration. Consider the 50 V collector-emitter breakdown limit and 150 mW power dissipation capability when designing thermal management solutions. Evaluate the hFE rank requirements (Q, R, or S) based on circuit gain stability needs. Use the 2SB1219A PNP transistor for complementary push-pull configurations.

Single Bipolar Transistors Part Context

The 2SD1820A belongs to Panasonic's lineup of silicon NPN epitaxial planar transistors intended for standard electronic applications. It is part of a complementary pair system, specifically matched with the 2SB1219A PNP transistor. The device utilizes the SMini3-G1 package, which supports automated assembly processes through tape packing, facilitating efficient manufacturing for consumer electronics and office equipment.

Single Bipolar Transistors Replacement Considerations

The 2SB1219A is the documented complementary PNP transistor for this series. Verify pinout compatibility and electrical ratings before substituting with other small-signal NPN transistors in the SMini3-G1 package.

Single Bipolar Transistors FAQ

What are the available forward current transfer ratio (hFE) ranks?

The device is classified into three ranks: Q (85 to 170), R (120 to 240), and S (170 to 340). Non-ranked devices are also available without specific marking symbols.

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) with the emitter open is rated at 60 V.

How does the SMini3-G1 package support manufacturing?

The SMini3-G1 package allows for downsizing of equipment and enables automatic insertion through tape packing.