2SD18230RL

Description：TRANS NPN 40V 0.05A SMINI3-G1
Series：-

SKU:34fe287019f3 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SD18230RL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 40V 0.05A SMINI3-G1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD18230RL

Description：TRANS NPN 40V 0.05A SMINI3-G1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：1µA
DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 2mA, 10V
Power - Max：150 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SMini3-G1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD18230RL

2SD18230RL

Single Bipolar Transistors Overview

The Panasonic 2SD1823 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features an S-Mini type package (SC-70) with dimensions of 2.0mm x 1.3mm, supporting automatic insertion via tape or magazine packing. The device provides a collector current rating of 50mA and a collector-emitter voltage of 40V. Key electrical characteristics include a transition frequency of 120MHz and a forward current transfer ratio ranging from 400 to 2000 depending on the rank.

Single Bipolar Transistors Feature Summary

High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
High emitter-base voltage VEBO
Low noise voltage NV

Single Bipolar Transistors Applications

Low-frequency amplification circuits
General electronic equipment
Office equipment
Communications equipment
Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R, S, or T) required for your circuit design, as the datasheet defines distinct gain ranges for each classification. Confirm that the component meets the RoHS Directive (EU 2002/95/EC) requirements for your manufacturing process. Ensure the operating conditions remain within the absolute maximum ratings to prevent device failure.

Single Bipolar Transistors Selection Notes

Select this component when a compact surface-mount footprint is necessary for downsizing equipment. The S-Mini package facilitates automated assembly through tape and magazine packing. Consider the specific hFE rank needed for signal amplification linearity and ensure the low noise voltage specification aligns with the sensitivity requirements of the input stage.

Single Bipolar Transistors Part Context

This transistor belongs to the Panasonic Silicon NPN epitaxial planar family. It utilizes a triple diffusion planar structure optimized for general-purpose switching and amplification tasks. The device is housed in the EIAJ SC-70 compatible SMini3-G1 package, which is standard for small-signal applications requiring minimal board space.