2SD1835S-AA

Single Bipolar Transistors Overview

The 2SD1835S-AA is an NPN single silicon bipolar transistor in the NP package. It supports a collector-to-emitter voltage of 50V and a continuous collector current of 2A, with a peak pulse current rating of 3A. The device features a maximum power dissipation of 0.75W at 25°C ambient temperature and operates up to a junction temperature of 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 560 depending on the rank, a gain-bandwidth product of 150MHz, and a collector-to-emitter saturation voltage of 0.4V maximum at 1A collector current.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides large current capacity suitable for high-load applications
• Features low collector-to-emitter saturation voltage for efficiency
• Delivers fast switching time for rapid signal control

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• Electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix AA against official documentation to confirm packaging details. The datasheet indicates this variant ships in boxes of 1,500 pieces. Confirm that the NP package type matches the target PCB footprint requirements. Ensure thermal management aligns with the 0.75W dissipation limit under expected operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN switching capabilities with moderate voltage ratings. The wide hFE range necessitates checking the specific bin rank for precise gain requirements. Consider the 0.75W power dissipation limit and ensure adequate heat sinking or derating strategies are implemented for sustained operation near maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1835 series of NPN bipolar transistors manufactured by onsemi. The series includes variants such as the 2SD1835S and 2SD1835T, which share identical electrical specifications but differ in shipping packaging methods. The device utilizes standard through-hole mounting technology within the NP package form factor.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other 2SD1835 variants like the 2SD1835S or 2SD1835T, provided the packaging difference is acceptable. Verify pinout compatibility and electrical limits before substituting with generic NPN transistors.