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2SD1867TV2 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN DARL 100V 2A ATV. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1867TV2
- Description：TRANS NPN DARL 100V 2A ATV
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Box (TB)
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 1A, 2V
- Power - Max：1 W
- Frequency - Transition：80MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：3-SIP
- Supplier Device Package：ATV
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1867TV2
Single Bipolar Transistors Overview
The ROHM 2SD1867TV2 is a power transistor featuring a Darlington connection for high DC current gain. It operates with a collector-emitter voltage of 100V and a continuous collector current of 2A. The device includes a built-in resistor between the base and emitter, alongside a damper diode. It utilizes the ATV package code and is supplied in a taping configuration.
Single Bipolar Transistors Feature Summary
- Darlington connection architecture providing high DC current gain
- Integrated base-to-emitter resistor
- Built-in damper diode
Single Bipolar Transistors Applications
- Power amplification circuits
- Complementary pairing with 2SB1580 or 2SB1316 PNP transistors
Single Bipolar Transistors Procurement Notes
Verify that the ordering suffix TV2 corresponds to the ATV package type and taping specifications. Confirm the hFE marking designation T100 aligns with the required gain range. Ensure the basic ordering unit matches the specified quantity requirements for production integration.
Single Bipolar Transistors Selection Notes
Select this component when high DC current gain is required within a 100V collector-emitter voltage limit. The integrated damper diode and base-to-emitter resistor simplify circuit design by reducing external component count. Verify thermal dissipation capabilities against the specific application load conditions.
Single Bipolar Transistors Part Context
This part belongs to a series including the 2SD2195 and 2SD1980. All variants share identical electrical characteristics and absolute maximum ratings. The primary distinction lies in the physical package codes and associated mechanical dimensions.
Single Bipolar Transistors Replacement Considerations
The 2SD2195 and 2SD1980 are electrically equivalent alternatives. Verify package compatibility before substitution.
Single Bipolar Transistors FAQ
What is the function of the internal components?
The device contains a built-in resistor between the base and emitter, as well as a damper diode.
Which packages are available for this series?
The series utilizes MPT3, CPT3, and ATV package codes.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
