Single Bipolar Transistors 2SD1949T106R product image

2SD1949T106R

$0.45
  • Description:TRANS NPN 50V 0.5A UMT3
  • Series:-

SKU:e69fb90fc98f Category: Brand:

  
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2SD1949T106R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.5A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1949T106R

  • Description:TRANS NPN 50V 0.5A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 10mA, 3V
  • Power - Max:200 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1949T106R

2SD1949T106R

Single Bipolar Transistors Overview

The 2SD1949T106R is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 500 mA. The device features a DC current gain (hFE) ranging from 120 to 390, with a transition frequency of 250 MHz. Power dissipation is rated at 200 mW, and the collector-emitter saturation voltage is 400 mV. It is housed in a compact SC-70-3 surface-mount package.

Single Bipolar Transistors Feature Summary

  • High DC current gain for efficient signal amplification
  • Compact SC-70-3 surface-mount package design
  • Suitable for high-frequency applications up to 250 MHz

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications in consumer electronics
  • Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm exact binning or tape-and-reel specifications. Ensure the component meets RoHS requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a small-footprint NPN transistor with moderate current handling and high gain is required. Consider the 200 mW power dissipation limit and thermal management needs. Compare the 50 V breakdown voltage against circuit requirements to ensure adequate safety margins during operation.

Single Bipolar Transistors Part Context

This part belongs to the ROHM 2SD1949 series of NPN transistors. It is designed for general-purpose use in portable devices where space is limited. The series emphasizes reliability and consistent electrical characteristics across manufacturing batches for mass production environments.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SD1949T106Q. Verify pinout compatibility and electrical parameter overlaps before substitution.

2SD1949T106R2SD1949T106R
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