SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SD1949T106R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.5A UMT3. Review the specifications below when checking this part for your BOM.
The 2SD1949T106R is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 500 mA. The device features a DC current gain (hFE) ranging from 120 to 390, with a transition frequency of 250 MHz. Power dissipation is rated at 200 mW, and the collector-emitter saturation voltage is 400 mV. It is housed in a compact SC-70-3 surface-mount package.
Verify the specific suffix against official ROHM documentation to confirm exact binning or tape-and-reel specifications. Ensure the component meets RoHS requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when a small-footprint NPN transistor with moderate current handling and high gain is required. Consider the 200 mW power dissipation limit and thermal management needs. Compare the 50 V breakdown voltage against circuit requirements to ensure adequate safety margins during operation.
This part belongs to the ROHM 2SD1949 series of NPN transistors. It is designed for general-purpose use in portable devices where space is limited. The series emphasizes reliability and consistent electrical characteristics across manufacturing batches for mass production environments.
Direct substitutes include the 2SD1949T106Q. Verify pinout compatibility and electrical parameter overlaps before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.