2SD19790SL

Single Bipolar Transistors Overview

The Panasonic 2SD1979 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification, muting circuits, and DC-DC converters. It features an S-Mini type package (SMini3-G1) with three pins in a small outline configuration. Key electrical parameters include a collector-base voltage of 50 V, a collector-emitter voltage of 20 V, and a maximum collector current of 300 mA. The device exhibits a high forward current transfer ratio (hFE) ranging from 500 to 2500 depending on the rank, a transition frequency of 80 MHz, and an ON resistance of approximately 1 Ω.

Single Bipolar Transistors Feature Summary

• Low ON resistance for efficient switching performance
• High forward current transfer ratio suitable for amplification
• Compact S-Mini type package enabling equipment downsizing
• Supports automatic insertion via tape or magazine packing

Single Bipolar Transistors Applications

• Low-frequency amplification
• Muting circuits
• DC-DC converter applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (S or T) required for your design, as the datasheet defines distinct gain ranges for each classification. Confirm that the component meets RoHS Directive compliance standards if applicable to your manufacturing requirements. Ensure the selected part matches the exact SMini3-G1 package dimensions for proper PCB footprint compatibility during assembly.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high gain and low saturation voltage is needed for general-purpose low-frequency tasks. Consider the thermal derating curves provided in the datasheet to ensure safe operation within the specified junction temperature limits under varying ambient conditions. Verify that the 20 V collector-emitter voltage rating aligns with your circuit's maximum operating voltage.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD1979 series of silicon NPN transistors. It is specifically engineered for applications requiring small form factors and reliable performance in consumer electronics and office equipment. The product lifecycle status should be verified through official channels, as it may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for confirmed substitute part numbers before implementation. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, voltage ratings, and package dimensions against the original specifications.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD1979?

The datasheet specifies two hFE ranks: Rank S covers a range of 500 to 1500, while Rank T covers a range of 800 to 2500.

What is the maximum collector power dissipation?

The absolute maximum rating for collector power dissipation is 150 mW at an ambient temperature of 25°C.

Does the 2SD1979 comply with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).