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2SD1979GSL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 20V 0.3A SMINI3-F2. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1979GSL
- Description：TRANS NPN 20V 0.3A SMINI3-F2
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：20 V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：500 @ 4mA, 2V
- Power - Max：150 mW
- Frequency - Transition：80MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-85
- Supplier Device Package：SMini3-F2
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1979GSL
Single Bipolar Transistors Overview
The Panasonic 2SD1979GSL is a silicon NPN epitaxial planar transistor designed for low-frequency amplification, muting circuits, and DC-DC converters. It operates with a collector-emitter voltage of 20V and a maximum collector current of 300mA. The device features a minimum forward current transfer ratio (hFE) of 500 and an ON resistance (Ron) of 1Ω. Packaged in the SMini3-F2 surface-mount format, it supports automatic insertion via tape or magazine packing.
Single Bipolar Transistors Feature Summary
- Low ON resistance Ron
- High forward current transfer ratio hFE
- S-Mini type package allowing downsizing
Single Bipolar Transistors Applications
- Low frequency amplification
- Muting circuits
- DC-DC converter
Single Bipolar Transistors Procurement Notes
Verify the exact ordering suffix against the official Panasonic semiconductor database to confirm availability status. The component may be subject to planned maintenance or discontinuation schedules. Consult the manufacturer's lifecycle documentation before finalizing procurement plans to ensure long-term supply compatibility.
Single Bipolar Transistors Selection Notes
Select this component for applications requiring high gain and low saturation resistance in compact designs. Ensure the operating collector current remains within the 300mA limit and that the circuit design accommodates the 20V collector-emitter breakdown voltage. Verify thermal dissipation requirements against the 150mW power rating at ambient conditions.
Single Bipolar Transistors Part Context
This part belongs to the Panasonic 2SD1979 series of small signal bipolar transistors. It utilizes a silicon NPN epitaxial planar structure optimized for general-purpose switching and amplification tasks where space constraints necessitate the use of the SMini3-F2 surface-mount package.
Single Bipolar Transistors Replacement Considerations
Consult the official Panasonic replacement guide for verified substitute part numbers. Do not assume cross-compatibility with generic equivalents without verifying pinout alignment and electrical parameter limits.
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