2SD19960TA

Single Bipolar Transistors Overview

The Panasonic 2SD1996 is a silicon NPN epitaxial planar transistor designed for low-voltage output amplification, muting, and DC-DC converter applications. It features a maximum collector current of 0.5 A and a peak collector current of 1 A. The device supports a collector-emitter voltage of 20 V and a collector-base voltage of 25 V. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 60 at 1 A and a transition frequency (fT) of 200 MHz. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage
• Low ON resistance
• High forward current transfer ratio

Single Bipolar Transistors Applications

• Low-voltage output amplification
• Muting circuits
• DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape specifications. Confirm compliance with RoHS directives as stated in the datasheet. Check the manufacturer's website for the latest lifecycle status, as this component may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high hFE and low saturation voltage in low-voltage environments. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding collector power dissipation and junction temperature limits during thermal analysis.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD series of silicon NPN transistors. It utilizes an MT-1-A1 package and is manufactured using an epitaxial planar process. The device is intended for standard applications in general electronic equipment such as office and communications gear.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists on the manufacturer's website for verified substitutes. Do not assume cross-compatibility with other NPN transistors without verifying pinout and electrical parameters.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The continuous collector current (IC) is rated at 0.5 A, while the peak collector current (ICP) can reach 1 A.

How is the ON resistance defined?

ON resistance (Ron) is measured under specific test conditions where IB = 1 mA and V = 0.3 V, calculated using the formula Ron = VB × 1000 / (VA - VB).

What are the available hFE ranks?

The device offers three hFE ranks: Rank R (200 to 350), Rank S (300 to 500), and Rank T (400 to 800).