2SD1997-TD-E

Single Bipolar Transistors Overview

The 2SD1997-TD-E is an NPN silicon epitaxial planar transistor manufactured by onsemi. It features a PCP (Power Chip Package) housing with three terminals, designed for high-voltage switching applications. The device supports a collector-emitter voltage of 300V and a continuous collector current of 8A. Key electrical characteristics include a DC current gain (hFE) ranging from 14 to 140 at a collector current of 500mA, and a low saturation voltage of 1.5V maximum at 4A. The component operates within a junction temperature range of -55°C to +150°C and is supplied in tape-and-reel packaging.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding power switching environments
• Low collector-emitter saturation voltage for improved efficiency
• Robust thermal performance with wide operating temperature range
• Designed for fast switching speeds using FBET process technology

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Inverter applications
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference datasheet parameters such as hFE binning and thermal resistance values before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation and substantial current handling in a compact surface-mount form factor. Evaluate thermal management requirements based on the specified allowable power dissipation limits. Consider the trade-off between switching speed and drive complexity when integrating into high-frequency circuits.

Single Bipolar Transistors Part Context

This device belongs to onsemi's discrete semiconductor product line, specifically categorized under bipolar junction transistors. It utilizes advanced fabrication processes to achieve high reliability and consistent performance characteristics across production batches. The part is engineered for industrial and consumer electronics applications requiring robust power switching capabilities.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when replacing with alternative manufacturers' components.