2SD2098T100R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2098T100R is an NPN silicon epitaxial planar transistor designed for strobe flash applications. It features a low collector-emitter saturation voltage of 0.25V typical at IC/IB = 4A/0.1A and excellent DC current gain characteristics. The device supports a maximum continuous collector current of 5A and a peak pulse current of 10A. Key electrical ratings include a collector-base voltage of 50V, collector-emitter voltage of 20V, and emitter-base voltage of 6V. Power dissipation reaches 0.5W in the MPT3 package and up to 2W when mounted on a ceramic board. The transition frequency is 150MHz.

Single Bipolar Transistors Feature Summary

• Low VCE(sat) optimized for strobe flash efficiency
• Epitaxial planar structure for high reliability
• High DC current gain performance

Single Bipolar Transistors Applications

• Strobe flash driver circuits
• General purpose switching applications requiring low saturation voltage

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (R or Q) required for your design against the ordering suffix, as gain ranges vary. Confirm the package code matches your PCB footprint requirements. Check the supply status, as this component may be marked as not recommended for new designs depending on the manufacturing date. Ensure thermal management aligns with the specified power dissipation limits for the chosen mounting condition.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage is critical for minimizing power loss during high-current pulses. Compare the 20V VCEO rating against circuit voltage spikes to ensure adequate headroom. Consider the 5A continuous current limit for steady-state loads versus the 10A pulse capability for transient demands. Verify compatibility with complementary PNP transistors like the 2SB1386 if used in push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to ROHM's series of low VCE(sat) transistors intended for strobe flash drivers. It complements PNP counterparts such as the 2SB1386, 2SB1412, and 2SB1326. The device utilizes an NPN silicon epitaxial planar structure. It is available in surface-mount packages including CPT3 (TO-252) and MPT3 (SOT-89).

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include 2SCR552P5 and 2SCR552PHZG, which share the same pinout and package.