2SD2129,ALPSQ(M

Single Bipolar Transistors Overview

The Toshiba 2SD2129 is a silicon NPN triple diffused Darlington transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, with a pulse capability of 5 A. The device offers a minimum DC current gain (hFE) of 1000 at 3 A and maintains a low saturation voltage of 2.0 V maximum under full load. Packaged in the SC-67 form factor, it provides a collector power dissipation of 20 W when mounted on an infinite heat sink.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for direct drive applications
• Low collector-emitter saturation voltage for efficient switching
• Triple diffused construction for robust performance

Single Bipolar Transistors Applications

• Hammer drive circuits
• Pulse motor drive systems
• General high-power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as the datasheet indicates this requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish if applicable. Confirm package marking details correspond to the specific manufacturing lot and date code requirements for your assembly process.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high input impedance and substantial output current handling within a 100 V limit. The Darlington configuration minimizes base drive requirements compared to single transistors. Evaluate thermal management strategies carefully, as the 20 W dissipation rating depends on effective heat sinking. Consider the storage time characteristics when designing for high-frequency pulse applications.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's line of silicon NPN Darlington transistors utilizing triple diffused technology. It complements other high-gain switching devices by offering superior current amplification in a compact flange-mount package. The SC-67 housing facilitates direct mounting to chassis heatsinks, simplifying thermal design in industrial and consumer electronic equipment.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.