2SD2137APA

Single Bipolar Transistors Overview

The Panasonic 2SD2137APA is a silicon NPN triple diffusion planar power transistor designed for power amplification applications. It features an MT-4-A1 package with three pins and supports a maximum collector current of 3A and a peak collector current of 5A. The device provides a collector-emitter voltage rating of 80V and a collector-base voltage of 80V. It dissipates up to 15W of power at 25°C, with a junction temperature limit of 150°C. The component exhibits a transition frequency of 30MHz and includes hFE rank classifications (Q, P, O) for forward current transfer ratio linearity.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio with satisfactory linearity
• Low collector-emitter saturation voltage
• Radial taping supply capability

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, P, or O) required for your design, as the datasheet defines distinct ranges for each. Confirm the latest lifecycle status on the manufacturer's website, as this product may be subject to maintenance or discontinuation phases. Ensure compliance with standard application guidelines and avoid use in safety-critical systems without prior consultation.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE rank based on the required gain consistency for the amplifier circuit. Consider the thermal resistance characteristics when designing heat dissipation solutions, particularly if operating above ambient temperatures. Verify that the 80V voltage rating meets the peak circuit requirements to ensure safe operation within absolute maximum ratings.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD series of silicon NPN transistors. It is specifically engineered as a complementary device to the 2SB1417A PNP transistor, facilitating push-pull configurations in power amplifier designs. The triple diffusion planar technology ensures robust performance for general-purpose power amplification tasks.

Single Bipolar Transistors Replacement Considerations

The 2SD2137A is the direct complementary counterpart to the 2SB1417A. For replacements, verify pinout compatibility and electrical parameters such as VCEO and IC against the original design specifications.

Single Bipolar Transistors FAQ

What are the hFE rank classifications for the 2SD2137APA?

The device offers three hFE ranks: Rank Q (70 to 150), Rank P (120 to 250), and Rank O (160 to 320).

Is the 2SD2137APA suitable for aerospace applications?

No, it is intended for standard applications like office and communications equipment. Special applications requiring exceptional reliability must be discussed with sales staff.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 15W at an ambient temperature of 25°C.