2SD2138APA

Single Bipolar Transistors Overview

The Panasonic 2SD2138APA is a silicon NPN triple diffusion planar type darlington transistor designed for power amplification. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 2 A, with a peak collector current rating of 4 A. The device dissipates up to 15 W at 25°C case temperature. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 1,000 to 10,000 depending on the rank, a transition frequency (fT) of 20 MHz, and a collector-emitter saturation voltage (VCE(sat)) of 2.5 V at 2 A. It utilizes the MT-4-A1 radial through-hole package.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) providing satisfactory linearity for power amplification applications.
• Radial taping supply capability allowing automated assembly integration.

Single Bipolar Transistors Applications

• General electronic equipment such as office equipment and household appliances.
• Communications equipment requiring standard power amplification.
• Measuring instruments utilizing low-frequency output amplification.

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official Panasonic specifications due to lifecycle status. Confirm that the specific ordering suffix matches the required hFE rank classification. Ensure compliance with export control regulations if applicable. Validate that the MT-4-A1 package dimensions align with existing PCB footprints before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when high gain and linear power amplification are required in a radial package. Consider the complementary 2SB1418A for push-pull configurations. Evaluate thermal management requirements carefully, as power dissipation drops significantly without a heat sink. Verify that the 80 V breakdown voltage meets circuit operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD2138 series of silicon NPN darlington transistors. It is specifically engineered for power amplification tasks where high current gain is essential. The product is categorized under maintenance or discontinued status by the manufacturer, indicating limited future production availability compared to active series components.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: TIP112 (STMicroelectronics).

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is 2.5 V when the collector current is 2 A and the base current is 8 mA.

How does the hFE rank affect performance?

The hFE2 rank classifies the forward current transfer ratio at 2 A collector current. Rank Q ranges from 2,000 to 5,000, while Rank P ranges from 4,000 to 10,000.

Is this component suitable for aerospace applications?

No. The datasheet explicitly states that the product is intended for standard applications like office equipment and household appliances, not for special applications such as aerospace or life support systems.