2SD2138AQA

Single Bipolar Transistors Overview

The Panasonic 2SD2138AQA is a silicon NPN triple diffusion planar type Darlington power transistor designed for power amplification. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) rating of 2 A, with a peak collector current (ICP) capability of 4 A. The device offers a high forward current transfer ratio (hFE), reaching up to 10,000 at IC = 2 A. It dissipates 15 W of power at TC = 25°C and operates within a junction temperature range up to 150 °C. The component utilizes an MT-4-A1 package.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) providing satisfactory linearity.

Single Bipolar Transistors Applications

• Power amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging specifications. Confirm the current lifecycle status, as this product may be classified under maintenance or discontinued categories. Ensure compliance with RoHS Directive requirements during procurement. Consult the manufacturer's sales staff for availability updates and latest product standards before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high gain and linear power amplification. Consider the 80 V collector-emitter voltage limit and 2 A continuous current rating when designing circuit parameters. Evaluate thermal management needs, as the device supports 15 W dissipation only at a controlled case temperature of 25°C. Verify that the radial taping supply method aligns with automated assembly processes.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD series of silicon NPN transistors. It is specifically engineered as a Darlington configuration for power amplification tasks. The device is complementary to the 2SB1418A PNP transistor, allowing for push-pull amplifier configurations in standard electronic equipment designs.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic resources for verified substitute part numbers. Check for updated datasheets regarding equivalent components if this part is discontinued.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The collector-emitter saturation voltage (VCE(sat)) is 2.5 V when the collector current is 2 A and the base current is 8 mA.

Does the 2SD2138AQA include internal protection diodes?

No, the provided datasheet does not indicate the presence of built-in diodes or resistors; it is described strictly as a triple diffusion planar type Darlington transistor.

What is the transition frequency of the device?

The transition frequency (fT) is 20 MHz, measured at VCE = 10 V, IC = 0.5 A, and f = 1 MHz.