2SD2141

Single Bipolar Transistors Overview

The Sanken 2SD2141 is a silicon NPN triple diffused planar transistor designed for high-voltage applications. It features an absolute maximum collector-emitter voltage of 380 V and a continuous collector current rating of 6 A. The device incorporates a built-in avalanche diode for surge absorbing capabilities, enhancing reliability in inductive load switching. Electrical characteristics include a minimum DC current gain (hFE) of 1500 at IC=25mA and a typical transition frequency (fT) of 20 MHz. The component is housed in an FM20 (TO-220F) package with a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Integrated avalanche diode structure for effective surge absorption
• High breakdown voltage capability suitable for demanding power circuits
• Triple diffused planar construction for robust performance

Single Bipolar Transistors Applications

• Ignitor circuits
• Driver for solenoids
• Driver for motors
• General purpose switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status as per the latest datasheet revision. Ensure the procurement channel provides traceable origin from Sanken Electric USA Inc. or authorized distributors to guarantee component authenticity and quality assurance.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand a high-voltage NPN Darlington configuration with integrated surge protection. The 380V rating makes it suitable for mains-connected or high-inductive loads where standard transistors might fail due to voltage spikes. Consider the thermal resistance characteristics and required heatsinking for continuous operation above ambient temperatures to maintain safe junction limits.

Single Bipolar Transistors Part Context

This part belongs to Sanken's line of discrete semiconductors, specifically high-voltage NPN transistors. It utilizes triple diffused planar technology, which offers improved stability and performance compared to older diffusion methods. The inclusion of the avalanche diode distinguishes it from standard Darlington transistors, providing added protection against back-EMF in motor and solenoid drive applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.