SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SD2143TL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN DARL 60V 2A CPT3. Review the specifications below when checking this part for your BOM.
The ROHM 2SD2143TL is a medium power NPN transistor designed for motor and relay drive applications. It features an integrated zener diode between the collector and base, a built-in resistor between the base and emitter, and a damper diode to protect against reverse surges from inductive loads. The device operates with a collector-emitter voltage of 60V and a continuous collector current of 2A. It utilizes the CPT3 (TO-252) surface-mount package.
Verify the specific ordering suffix TL corresponds to the required tape-and-reel quantity of 2500 units per standard reel. Confirm the package designation CPT3 matches the target PCB footprint. Ensure the component meets RoHS compliance requirements for the intended manufacturing process.
Select this component when driving inductive loads such as motors or relays that require robust reverse surge protection. The internal zener and damper diodes simplify circuit design by reducing external component count. Consider the 1W power dissipation limit and thermal management requirements for the TO-252 package during selection.
This part belongs to a family of equivalent medium power transistors manufactured by ROHM, sharing identical electrical characteristics and pinouts with the 2SD2212 and 2SD1866. These devices are engineered to handle the specific demands of switching high-current inductive loads while providing internal protection against voltage spikes common in automotive and industrial control environments.
The 2SD2212 and 2SD1866 are confirmed equivalent parts with identical specifications and pinouts. Verify that the replacement part number uses the same CPT3/TO-252 package to ensure mechanical compatibility without PCB redesign.
The internal zener diode is connected between the collector and base to clamp voltage spikes and provide protection against reverse surges caused by inductive loads like motors and relays.
The built-in resistor between the base and emitter helps stabilize the transistor's off-state and improves noise immunity by preventing false triggering due to leakage currents or electromagnetic interference.
The maximum collector-emitter breakdown voltage (BVCEO) is rated at 60V, with a tolerance of ±10V depending on the specific manufacturing batch.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.