2SD2153T100V

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2153T100V is an NPN silicon bipolar junction transistor housed in a surface-mount SOT-89 (MPT3) package. It features a collector-emitter voltage of 25 V and a continuous collector current rating of 2 A. The device offers a high DC current gain ranging from 560 to 2700, with a transition frequency of 110 MHz. Power dissipation is rated at 0.5 W on a reference land or 2.0 W on a ceramic board. The maximum operating junction temperature reaches 150°C.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power handling
• High DC current gain suitable for amplification
• Designed for low-frequency power amplifier applications

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T100 against official documentation to confirm packaging details such as reel size and tape width. Ensure that the ordering part number matches the required marking code DN. Confirm compliance with RoHS standards and check for any specific storage time limitations before soldering to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-frequency power amplification. Consider the 25 V collector-emitter voltage and 2 A current capacity against circuit demands. Evaluate thermal management requirements based on the 0.5 W or 2.0 W power dissipation ratings depending on the mounting configuration used.

Single Bipolar Transistors Part Context

This component belongs to the 2SD2153 series of high-gain amplifier transistors manufactured by ROHM Semiconductor. It utilizes silicon technology and is designed for surface-mount assembly. The device is categorized under bipolar junction transistors intended for general electronic equipment applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 120 mV at a collector current of 1 A and a base current of 20 mA.

How is the DC current gain classified?

The DC current gain is classified into ranks U, V, and W, covering ranges from 560 to 2700.

What is the maximum collector pulse current?

The maximum single pulse collector current is 3 A with a pulse width of 10 ms.