2SD2153T100W

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2153T100W is a high-gain NPN bipolar junction transistor designed for low-frequency power amplifier applications. It features a SOT-89 (MPT3) surface-mount package with a collector-emitter voltage of 25V and a continuous collector current of 2A. The device achieves a typical saturation voltage of 120mV at 1A/20mA drive conditions. DC current gain is classified into ranks U, V, and W, covering ranges from 560 to 2700. Transition frequency reaches 110MHz, and power dissipation is rated at 0.5W on a reference land or 2.0W on a ceramic board.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power handling
• High DC current gain across multiple classification ranks
• Optimized for low-frequency power amplification

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (U, V, or W) required for your design, as the base part number covers a range of gain classifications. Confirm that the SOT-89 MPT3 package aligns with your PCB footprint and thermal management strategy. Ensure operating conditions remain within the specified absolute maximum ratings to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is needed for low-frequency power amplification tasks. Consider the thermal derating requirements if mounting on standard FR4 versus the specified ceramic board. Evaluate the hFE rank against circuit biasing needs to ensure consistent performance across production batches.

Single Bipolar Transistors Part Context

This component belongs to the 2SD2153 series of high-gain amplifier transistors manufactured by ROHM Semiconductor. It utilizes the SOT-89 (MPT3) surface-mount technology, providing a compact solution for power applications. The series is engineered to deliver reliable performance in consumer electronics and audio equipment requiring efficient signal amplification.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.