2SD2176-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD2176-TD-E is a single NPN Darlington bipolar junction transistor designed for high-current switching applications. It features a collector current rating of 1.2 A and a maximum collector-emitter voltage of 50 V. The device utilizes a Darlington configuration to provide high current gain, making it suitable for driving loads that require significant base drive current amplification. Packaged in standard through-hole formats, this component is engineered for reliability in power management circuits where moderate voltage blocking and sustained current handling are required.

Single Bipolar Transistors Feature Summary

• NPN Darlington configuration for high current gain
• Rated for 1.2 A continuous collector current
• 50 V maximum collector-emitter voltage capability

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Relay driver stages
• Power supply output regulation

Single Bipolar Transistors Procurement Notes

Verify the specific package type and tape/reel specifications against the official datasheet before ordering, as bulk packaging may differ from automated assembly requirements. Confirm RoHS compliance status with the manufacturer for environmental regulations. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with high current gain is needed for low-voltage switching tasks. The 50 V rating limits its use to low-power systems. Consider thermal dissipation requirements due to the Darlington structure's higher saturation voltage compared to single-transistor designs.

Single Bipolar Transistors Part Context

This part belongs to the single bipolar transistor category within onsemi’s discrete semiconductor portfolio. It serves as a fundamental building block for analog and digital power control interfaces. The Darlington topology distinguishes it from standard BJT variants by offering superior amplification at the cost of increased voltage drop.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for direct substitutes. Generic NPN Darlington transistors with matching 1.2 A and 50 V ratings may serve as alternatives if pin compatibility and thermal characteristics align.