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The onsemi 2SD2202R is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features an 80 V collector-emitter voltage rating and a continuous collector current capacity of 5 A. The device operates with a transition frequency of 20 MHz and dissipates up to 2 W of power. Packaged in the TO-220ML through-hole format, it provides robust thermal performance suitable for medium-power electronic circuits requiring reliable NPN switching capabilities.
Verify the specific manufacturer source when ordering, as component availability may vary across authorized distributors. Confirm that the received units match the exact part number specifications regarding package type and electrical ratings before integration into production designs.
Select this component for designs requiring an NPN transistor capable of handling 5 A loads at 80 V. Ensure the application circuit accounts for the 2 W power dissipation limit and utilizes appropriate heat sinking if operating near maximum thermal limits within the TO-220ML package.
This device belongs to the family of discrete bipolar transistors manufactured by onsemi. It serves as a fundamental active component in electronic systems, providing current gain and switching functionality. The TO-220ML package distinguishes it from surface-mount alternatives, catering to legacy or high-reliability through-hole design architectures.
Consult official cross-reference documentation for direct substitutes. Verify that any alternative NPN BJT matches the 80 V rating, 5 A current capacity, and compatible pinout configuration to ensure functional equivalence without redesigning the host circuit board.
The maximum continuous collector current is 5 A.
No, it is a DC-controlled NPN BJT; AC signals require biasing or rectification before driving the base.