2SD2206(TE6,F,M)

Description：TRANS NPN 100V 2A TO-92MOD
Series：-

SKU:2dfccf1a1566 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SD2206(TE6,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 100V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2206(TE6,F,M)

Description：TRANS NPN 100V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 1A, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SD2206(TE6,F,M) is a Silicon NPN Epitaxial Darlington Power Transistor housed in a TO-92MOD package. It features a collector-emitter voltage of 100 V, a continuous collector current of 2 A, and a maximum power dissipation of 900 mW. The device provides a minimum DC current gain (hFE) of 2000 at 1 A and 2 V, with a maximum collector-emitter saturation voltage of 1.5 V under the same conditions. Transition frequency is rated at 100 MHz.

Single Bipolar Transistors Feature Summary

Darlington configuration providing high DC current gain for efficient drive requirements
Low collector-emitter saturation voltage to minimize conduction losses
Robust pulse collector current capability exceeding steady-state ratings

Single Bipolar Transistors Applications

Micro motor drive circuits
Hammer drive mechanisms
General switching applications
Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate variations based on lot numbers. Confirm component availability, noting that specific ordering suffixes may affect environmental compliance or packaging details. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are required within a small form factor. Ensure thermal management accommodates the 900 mW power dissipation limit. Verify that the 100 V collector-emitter breakdown voltage meets circuit requirements. Consider the transition frequency characteristics for high-speed switching needs.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2206 series of NPN epitaxial planar transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a Darlington structure to achieve superior amplification capabilities compared to standard bipolar junction transistors. The TO-92MOD package offers a compact solution for through-hole mounting in various electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified equivalent part numbers. Cross-referencing should prioritize matching electrical parameters such as voltage ratings, current limits, and package type to ensure functional compatibility without design modification.