2SD2212T100

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2212T100 is a surface-mount NPN Darlington bipolar junction transistor designed for power amplification. It features a collector-emitter voltage of 60 V, a continuous collector current of 2 A, and a power dissipation rating of 2 W. The device offers a high DC current gain ranging from 1000 to 10000 at 1 A and 2 V. Integrated protection includes a built-in Zener diode between the collector and base, along with a base resistor, providing strong defense against reverse surges associated with inductive loads.

Single Bipolar Transistors Feature Summary

• NPN Darlington configuration optimized for high-gain power amplification applications
• Integrated Zener diode between collector and base for enhanced surge protection
• Built-in base resistor to assist in driving and stability management

Single Bipolar Transistors Applications

• Power amplifier circuits requiring high current gain
• Switching applications involving inductive loads
• General-purpose power amplification modules

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels due to the 'Not Recommended for New Designs' status. Confirm RoHS compliance and REACH SVHC declarations prior to procurement. Ensure the MPT3 package variant matches your PCB footprint requirements. Validate that the specific lot meets all electrical specifications outlined in the official datasheet before integration into production systems.

Single Bipolar Transistors Selection Notes

Select this component for designs prioritizing high current gain and integrated protection mechanisms. The Darlington structure simplifies drive requirements but may introduce higher saturation voltages compared to standard BJTs. Consider thermal management strategies given the 2 W power dissipation limit. Evaluate if the integrated Zener and resistor meet specific circuit protection needs without external components.

Single Bipolar Transistors Part Context

This part belongs to ROHM's single NPN bipolar transistor lineup, specifically engineered for surface-mount technology. It utilizes silicon technology within an MPT3 (SOT-89) package. The series is targeted at applications demanding robust performance in compact form factors, leveraging internal structures to minimize external component count while maintaining high reliability standards for industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As this component is marked as Not Recommended for New Designs, engineers should consult official ROHM resources or distributors for updated equivalent recommendations suitable for new product development.