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2SD2226KT146V is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.15A SMT3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD2226KT146V
- Description：TRANS NPN 50V 0.15A SMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：150 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：300nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：820 @ 1mA, 5V
- Power - Max：200 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD2226KT146V
Single Bipolar Transistors Overview
The 2SD2226KT146V is a general-purpose NPN bipolar junction transistor manufactured by Rohm Semiconductor. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. The device operates with a maximum power dissipation of 200 mW at 25°C ambient temperature. Electrical characteristics include a transition frequency (fT) of 250 MHz and a DC current gain (hFE) ranging from 560 to 2700, classified into ranks U, V, and W. The component utilizes an SOT-346 (SMT3) surface-mount package.
Single Bipolar Transistors Feature Summary
- High DC current gain for efficient signal amplification
- High emitter-base breakdown voltage capability
- Low collector-emitter saturation voltage for reduced power loss
Single Bipolar Transistors Applications
- Low frequency amplifier circuits
Single Bipolar Transistors Procurement Notes
Verify the specific hFE rank (U, V, or W) required for your design against the datasheet classification table. Confirm that the SOT-346 footprint matches your PCB layout dimensions. Ensure thermal management allows for 200 mW dissipation within the specified junction temperature limits during operation.
Single Bipolar Transistors Selection Notes
Select this component when a high-gain NPN transistor is needed for low-frequency applications. The 50 V rating suits general-purpose switching and amplifying tasks. Consider the specific hFE bin requirements for consistent circuit performance across production batches.
Single Bipolar Transistors Part Context
This part belongs to the 2SD2226K series of general-purpose transistors. It shares core electrical specifications with other suffixes in the family but differs in packaging or grading. The KT146V designation indicates a specific taping code and hFE classification within the standard product line.
Single Bipolar Transistors Replacement Considerations
2SD2226KT146W
Single Bipolar Transistors FAQ
What are the DC current gain classifications for this transistor?
The hFE values are classified into three ranks: Rank U (560-1200), Rank V (820-1800), and Rank W (1200-2700).
What is the maximum collector-base voltage?
The maximum collector-base voltage (VCBO) is 60 V.
Is this component suitable for high-frequency RF applications?
No, the datasheet specifies it as a general-purpose transistor intended for low frequency amplifier applications.
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