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The Toshiba 2SD2257 is a silicon NPN epitaxial transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, with a peak pulse current capability of 5 A. The device provides a minimum DC current gain (hFE) of 2000 at 1 A or 2 A collector currents. Maximum saturation voltages are specified as 1.5 V for VCE(sat) and 2.0 V for VBE(sat). Power dissipation reaches 20 W at case temperatures of 25°C. The component utilizes a JEITA SC-67 package.
Verify RoHS compatibility directly with the manufacturer or authorized sales representatives, as the datasheet does not explicitly state compliance status. Confirm that the specific ordering suffix matches the required lead-free finish or packaging configuration. Ensure circuit designs account for derating requirements under heavy loads to maintain reliability within absolute maximum ratings.
Select this component when high current gain and low saturation voltage are critical for efficient power switching. It serves as the complementary match to the 2SB1495 PNP transistor for push-pull configurations. Verify thermal management capabilities, as power dissipation requires appropriate heat sinking at elevated case temperatures to prevent junction overheating.
This device belongs to the Toshiba Silicon NPN Epitaxial Type series, specifically engineered for robust performance in demanding switching environments. It is part of a broader family of discrete semiconductors intended for general electronics applications, including computer equipment, industrial robotics, and domestic appliances.
The 2SB1495 is the officially documented complementary PNP counterpart. No other direct substitute part numbers are confirmed in the provided documentation.