2SD2257,KEHINQ(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SD2257 is a silicon NPN epitaxial planar transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current rating of 3 A, and a collector power dissipation of 20 W at 25°C case temperature. The device provides a minimum DC current gain (hFE) of 2000 at 1 A or 2 A collector currents. Its maximum collector-emitter saturation voltage is 1.5 V under specified drive conditions.

Single Bipolar Transistors Feature Summary

• High DC current gain with a minimum specification of 2000
• Low collector-emitter saturation voltage for efficient switching
• Complementary pairing available with the 2SB1495 PNP transistor

Single Bipolar Transistors Applications

• Hammer drive systems
• Pulse motor drives
• General high-power switching circuits

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as the datasheet indicates this information is provided on a product-by-product basis. Confirm that the specific ordering suffix matches the required lead-free finish or package variant. Ensure the component meets all applicable safety standards for general electronics usage before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical for switching efficiency. The 100 V collector-emitter voltage rating suits moderate voltage applications. Consider the complementary 2SB1495 if a matched PNP pair is required for push-pull configurations. Verify thermal management requirements to maintain the junction temperature within the specified 150°C limit during operation.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Silicon NPN Epitaxial Type transistor family. It utilizes an epitaxial planar process to achieve high reliability and performance characteristics suitable for demanding switching environments. The device is housed in a JEDEC SC-67 package, providing a standardized footprint for surface-mount assembly in various electronic equipment.

Single Bipolar Transistors Replacement Considerations

The official complementary replacement is the 2SB1495 PNP transistor. Designers requiring a matched pair should verify pinout compatibility and electrical symmetry between the NPN 2SD2257 and the PNP 2SB1495 before substitution in existing circuit layouts.

Single Bipolar Transistors FAQ

What is the minimum DC current gain (hFE) for the 2SD2257?

The minimum DC current gain is 2000, measured at a collector current of 1 A or 2 A with a collector-emitter voltage of 2 V.

Is the 2SD2257 intended for use in medical instruments or safety devices?

No. The product is intended for general electronics applications. Use in medical instruments, safety devices, or other unintended high-reliability applications is not warranted and is at the customer's own risk.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 1.5 V, tested at a collector current of 1.5 A and a base current of 1.5 mA.