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Product Detailed Parameters
- Description：TRANS NPN 100V 3A TO-220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1.5mA, 1.5A
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 2A, 2V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220NIS
- Grade：-
- Qualification：-
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Overview
The 2SD2257 is a silicon NPN epitaxial planar transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, with a peak pulse current capability of 5 A. The device provides a minimum DC current gain (hFE) of 2000 at 1 A and 2 A collector currents. It exhibits a maximum collector-emitter saturation voltage of 1.5 V under specified test conditions. The component is housed in a SC-67 package with a thermal dissipation capacity of 20 W at 25°C case temperature.
Feature Summary
- High DC current gain ensuring efficient drive requirements
- Low saturation voltage for reduced power loss during conduction
- Complementary pairing available with the 2SB1495 PNP type
Applications
- Hammer drive circuits
- Pulse motor drive systems
- General high-power switching applications
Procurement Notes
Verify RoHS compatibility status directly with the manufacturer or authorized sales representatives, as the datasheet indicates this information requires specific product-by-product confirmation. Ensure design reliability aligns with Toshiba Semiconductor Reliability Handbook guidelines regarding derating concepts and operating conditions to maintain performance standards.
Selection Notes
Select this component for designs requiring high current gain and low saturation voltage in switching roles. Consider the complementary 2SB1495 for push-pull configurations. Evaluate thermal management capabilities based on the 20 W dissipation rating at 25°C case temperature. Verify that the 100 V breakdown voltage meets the circuit's maximum operational requirements.
Part Context
This NPN epitaxial transistor belongs to Toshiba's discrete semiconductor lineup intended for general electronics. It utilizes planar technology to achieve rugged performance characteristics suitable for demanding switching environments. The device is part of a broader family of bipolar transistors offering various voltage and current ratings for diverse electronic system needs.
Replacement Considerations
The 2SB1495 serves as the complementary PNP counterpart for this device. No other direct substitute part numbers are documented in the provided official specifications.
FAQ
What is the minimum DC current gain for the 2SD2257?
The minimum DC current gain (hFE) is 2000, measured at a collector current of 1 A or 2 A with a collector-emitter voltage of 2 V.
Is the 2SD2257 compatible with the 2SB1495?
Yes, the 2SD2257 is explicitly listed as complementary to the 2SB1495 PNP transistor.
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCE(sat)) is 1.5 V when tested with a collector current of 1.5 A and a base current of 1.5 mA.
