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Product Detailed Parameters
- Description：TRANS NPN 20V 0.7A MT-2-A1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：700 mA
- Voltage - Collector Emitter Breakdown (Max)：20 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 150mA, 10V
- Power - Max：1 W
- Frequency - Transition：55MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：3-SIP
- Supplier Device Package：MT-2-A1
- Grade：-
- Qualification：-
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Overview
The Panasonic 2SD2259 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features an MT-2-A1 package with three terminals: emitter, collector, and base. Key electrical ratings include a maximum collector-emitter voltage of 20 V, a continuous collector current of 0.7 A, and peak collector current of 1.5 A. The device offers a minimum forward current transfer ratio (hFE) of 1,000 at IC = 150 mA and VCE = 10 V. Collector-emitter saturation voltage is specified as 0.40 V maximum at IC = 500 mA and IB = 50 mA. Transition frequency reaches 55 MHz.
Feature Summary
- High forward current transfer ratio suitable for amplification applications
- Low collector-emitter saturation voltage for efficient switching
- Radial taping supply option available
Applications
- Low-frequency amplification circuits
- General electronic equipment
- Household appliances
Procurement Notes
Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging or variant specifications. Confirm component lifecycle status via manufacturer channels, as maintenance or discontinuation notices may apply. Ensure compliance with RoHS directives relevant to your region before procurement.
Selection Notes
Select this component for low-frequency amplification tasks requiring high gain and low saturation voltage. Verify that the 20 V collector-emitter voltage rating meets circuit requirements. Consider the MT-2-A1 package dimensions for PCB layout compatibility. Evaluate thermal dissipation needs relative to the 1 W power rating.
Part Context
This component belongs to the Panasonic 2SD series of silicon NPN transistors. It utilizes an epitaxial planar construction method. The device is intended for standard applications in general-purpose electronics rather than specialized automotive or aerospace environments.
Replacement Considerations
Consult official Panasonic cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on pinout or generic parameters without datasheet confirmation.
