2SD2318TLU

Overview

The ROHM 2SD2318TLU is a high-current gain NPN silicon power transistor designed for surface-mount applications. It features a CPT3 (TO-252) package with a maximum collector current of 3 A and a collector-emitter voltage rating of 60 V. The device offers a minimum DC current gain (hFE) of 560 at 0.5 A, with a transition frequency of 50 MHz. Power dissipation reaches 1 W in free air or 15 W when mounted to a heatsink at 25°C. The component supports junction temperatures up to +150°C.

Feature Summary

• High DC current gain capability
• Low collector-emitter saturation voltage
• Complements the 2SB1639 PNP counterpart

Applications

• General-purpose power switching circuits
• Driver stages requiring high current gain
• Complementary pairs with 2SB1639

Procurement Notes

Verify the NRND status before implementation, as this designation indicates the component is not recommended for new designs. Confirm that the CPT3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component for applications demanding high hFE and low saturation voltage in a surface-mount format. Consider the complementary 2SB1639 if a matched pair is required. Evaluate thermal performance carefully, as power dissipation varies significantly between free-air and heatsink-mounted scenarios.

Part Context

This part belongs to the 2SD2318 series of high-current gain power transistors manufactured by ROHM Semiconductor. It utilizes the CPT3 package standard, also known as SC-63, which provides robust thermal characteristics for surface-mount technology implementations.

Replacement Considerations

The datasheet explicitly states that the 2SD2318 complements the 2SB1639. No other direct substitute part numbers are documented in the provided source material.